The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1988
Filed:
Aug. 07, 1987
Applicant:
Inventors:
Erhard Kohn, Titusville, NJ (US);
Mark E Schneider, Lawrenceville, NJ (US);
Chia-Jen Wu, Somerset, NJ (US);
Assignee:
Siemens Corporate Research and Support, Inc., Iselin, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 55 ; 437203 ;
Abstract
A modulation-doped field effect transistor comprises a gate recess through a top insulating layer, having a cross-section in a semiconductor layer increasing down to an interface with a further semiconductor layer and thereafter having a cross-section in the further semiconductor layer decreasing down to the bottom of the recess in the further semiconductor layer. A gate electrode is formed in the recess.