Migdal Haemek, Israel

Erez Sarig

This inventor holds 15 USPTO granted patents, primarily in CMOS Technology. Top assignees: Tower Semiconductor Ltd., Tower Partners Semiconductor Co., Ltd., Other. Active years: 2005-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Erez Sarig. Retrieved from https://idiyas.com/inventor/erez-sarig

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 80.0

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 152(Granted Patents)


Location History:

  • Midgal Haemek, IL (2010)
  • Hertzeliya, IL (2007 - 2016)
  • Migdal Haemek, IL (2005 - 2021)
  • Kadima, IL (2016 - 2022)

Company Filing History:


Years Active: 2005-2025

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Areas of Expertise:
CMOS Image Sensor
Operational Transconductance Amplifier
Memory Module
Overcurrent Protection
Analog-to-Digital Converter
Voltage Control Circuit
Soft-Start Circuit
Horizontal Row Drivers
Comparator
Split-Gate MOS Transistor
Current Sensing Circuit
DC/DC Buck Converter
15 patents (USPTO):Explore Patents

Title: Erez Sarig: Innovator in Semiconductor Technology

Introduction

Erez Sarig is a renowned inventor based in Migdal Haemek, Israel, with an impressive portfolio of 15 patents to his name. His contributions to the field of semiconductor technology have significantly advanced the industry, particularly in the design and functionality of various electronic devices.

Latest Patents

Among his latest inventions is a patented semiconductor device designed for writing to a storage element. This innovative device comprises a storage element write unit featuring a storage element that can be electrically written only once and can store two values. The write controller facilitates the writing process based on specific control signals, while a write state detection circuit monitors the storage element's state, ensuring accurate operations. The write controller is adept at halting the writing process after a set time upon detecting the write state, showcasing Erez Sarig's meticulous approach to device efficacy.

Another notable patent by Sarig involves the apparatus, system, and method of a Metal-Oxide-Semiconductor (MOS) transistor that incorporates a split-gate structure. This invention illustrates an integrated circuit comprising a MOS that integrates a body, source, and drain, along with a control gate and a voltage-controlled Field-Plate (FP). The structure allows for seamless switching between operational states, adapting to varying conditions based on load current and switching frequency.

Career Highlights

Throughout his career, Erez Sarig has made significant contributions to several leading companies, including Tower Semiconductor Ltd. His work has been pivotal in shaping advancements in semiconductor technology, further underscoring his status as a prominent inventor in this domain.

Collaborations

Erez Sarig has had the opportunity to work alongside talented colleagues, including Raz Reshef and Shay Alfassi. These collaborations have not only enriched his experience but have also led to the development of groundbreaking technologies in semiconductor applications.

Conclusion

Erez Sarig's innovative spirit and commitment to excellence in semiconductor technology have positioned him as a notable figure in his field. With a growing number of patents and ongoing contributions to the industry, his work continues to influence the development of sophisticated electronic devices, marking him as a vital contributor to the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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