The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Dec. 13, 2005
Erez Sarig, Hertzeliya, IL;
Erez Sarig, Hertzeliya, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
Near-ground sensing of non-volatile memory (NVM) cells is performed on a selected NVM cell by applying a potential to a first terminal, coupling a second terminal to ground, and then decoupling the second terminal and passing the resulting cell current to an integrator, which generates a corresponding sense voltage. The amount of cell current (and resulting sense voltage) is controlled by the programmed/erased state of the NVM cell. The sense voltage is compared with a reference voltage to determine the cell's programmed/erased state. Current through neighbor cells is redirected to the sensing circuit using a special Y decoder to minimize the neighbor effect.