Singapore, Singapore

Eng-Hua Lim


Average Co-Inventor Count = 6.8

ph-index = 5

Forward Citations = 52(Granted Patents)


Location History:

  • S'Por, SG (2002)
  • Singapore, SG (2003 - 2005)

Company Filing History:


Years Active: 2002-2005

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5 patents (USPTO):

Title: Eng-Hua Lim: Innovator in CMOS Technology

Introduction

Eng-Hua Lim is a prominent inventor based in Singapore, known for his significant contributions to the field of semiconductor technology. With a total of five patents to his name, he has made remarkable advancements in the fabrication of CMOS devices.

Latest Patents

Eng-Hua Lim's latest patents include a method to produce dual gates for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing. This innovative method involves several steps, including the formation of a substrate with a gate dielectric layer and the conversion of a thin first gate layer into a thin third gate layer portion. Additionally, he has developed a method for forming dual gate oxide thickness on vertical transistors through ion implantation. This method enhances the gate oxide thickness on modified surfaces, leading to improved device performance.

Career Highlights

Eng-Hua Lim has had a distinguished career at Chartered Semiconductor Manufacturing Ltd, where he has played a crucial role in advancing semiconductor manufacturing processes. His expertise in CMOS technology has positioned him as a key figure in the industry.

Collaborations

Throughout his career, Eng-Hua Lim has collaborated with notable colleagues, including Mei-Sheng Zhou and Chew-Hoe Ang. These collaborations have further enriched his work and contributed to the success of various projects.

Conclusion

Eng-Hua Lim's innovative work in semiconductor technology, particularly in CMOS device fabrication, has made a lasting impact on the industry. His patents reflect his commitment to advancing technology and improving device performance.

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