St Marcellin, France

Emmanuelle Lagoutte

USPTO Granted Patents = 4 

 

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • St Marcellin, FR (2010 - 2015)
  • St. Marcellin, FR (2022)

Company Filing History:


Years Active: 2010-2022

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4 patents (USPTO):Explore Patents

Title: Emmanuelle Lagoutte: Innovator in Semiconductor Technology

Introduction

Emmanuelle Lagoutte is a prominent inventor based in St Marcellin, France. She has made significant contributions to the field of semiconductor technology, holding a total of four patents. Her innovative work focuses on engineered substrates and getter materials, showcasing her expertise in advanced materials science.

Latest Patents

One of her latest patents is an engineered substrate with an embedded mirror. This invention comprises a seed layer made of a first semiconductor material for the growth of a solar cell, along with a first bonding layer on the seed layer. It also includes a support substrate made of a second semiconductor material and a second bonding layer on a first side of the support substrate. The bonding interface between the first and second bonding layers is crucial, as both layers are made of metallic material. The design ensures that the absorption of the seed layer is less than 20%, preferably less than 10%, while maintaining a total area-normalized series resistance of less than 10 mOhm·cm, ideally less than 5 mOhm·cm.

Another notable patent involves a treatment method for a getter material and an encapsulation method for such material. This method includes forming a protective layer on the thin layer getter material through at least one oxidation and/or nitriding step conducted under a dry atmosphere of dioxygen and/or dinitrogen. The protective layer is composed of oxide and/or nitride of the thin layer getter material, with a thickness ranging from approximately 1 nm to 10 nm.

Career Highlights

Emmanuelle has worked with esteemed organizations such as the Commissariat à l'Énergie Atomique and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. Her experience in these institutions has allowed her to develop and refine her innovative ideas in semiconductor technology.

Collaborations

Throughout her career, Emmanuelle has collaborated with notable colleagues, including Charlotte Gillot and Nicolas Sillon. These partnerships have contributed to her success and the advancement of her research.

Conclusion

Emmanuelle Lagoutte is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. Her patents reflect her commitment to innovation and her expertise in developing cutting-edge materials.

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