Chandler, AZ, United States of America

Ellen Lan


Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 204(Granted Patents)


Company Filing History:


Years Active: 1999-2001

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4 patents (USPTO):Explore Patents

Title: Innovations of Ellen Lan

Introduction

Ellen Lan is a prominent inventor based in Chandler, AZ (US). She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

Ellen Lan's latest patents include an innovative electrode structure for transistors and non-volatile memories. This electrode structure is designed for semiconductor devices and features a first electrode material positioned in an overlying relationship to the substrate surface. It defines a first side wall that is perpendicular to the substrate. A nonconductive side wall spacer is formed on this first side wall, creating a second side wall that is parallel and spaced from the first. Additionally, a second electrode material is formed in an overlying relationship to the substrate and on the second side wall, defining a third side wall that is also parallel and spaced from the second side wall. The first and second electrode materials are connected as first and second electrodes in a common semiconductor device. Furthermore, additional electrodes can be formed by applying electrode material on additional side walls.

Another notable patent involves a method of fabricating a vertical FET with a sidewall gate electrode. This process includes etching through a contact layer into a drift layer on a compound semiconductor substrate to create multiple mesas. Each mesa has an upper surface, and adjacent pairs of mesas define trenches with sidewalls and a bottom. A conductive layer is conformally deposited over the mesas and trenches, which is then anisotropically etched to form contacts on the sidewalls of the trenches. Source contacts are deposited on the upper surfaces of the mesas, while a drain contact is placed on the reverse side of the substrate.

Career Highlights

Ellen Lan is currently employed at Motorola Corporation, where she continues to innovate in the semiconductor field. Her work has significantly impacted the development of advanced electronic components.

Collaborations

Ellen has collaborated with notable colleagues, including Jenn-Hwa Huang and Kurt W. Eisenbeiser, contributing to various projects and advancements in technology.

Conclusion

Ellen Lan's contributions to semiconductor technology through her patents and work at Motorola Corporation highlight her role as a leading inventor in the field. Her innovative approaches continue to shape the future of electronic devices.

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