The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Jul. 20, 1998
Applicant:
Inventors:
Ellen Lan, Chandler, AZ (US);
Jenn-Hwa Huang, Gilbert, AZ (US);
Kurt Eisenbeiser, Tempe, AZ (US);
Yang Wang, Phoenix, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438268 ; 438270 ; 438576 ; 438571 ; 438167 ;
Abstract
A vertical FET is fabricated by etching through a contact layer into a drift layer on a compound semiconductor substrate to form a plurality of mesas, each mesa having an upper surface and each adjacent pair of mesas defining therebetween a trench with sidewalls and a bottom. A conductive layer is conformally deposited over the plurality of mesas and the trenches and anisotropically etched to form contacts on the sidewalls of the trenches and depositing source contacts on the upper surfaces of the mesas and a drain contact on a reverse side of the substrate.