The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Dec. 05, 1997
Applicant:
Inventors:
Yang Wang, Chandler, AZ (US);
Jenn-Hwa Huang, Gilbert, AZ (US);
Kurt Eisenbeiser, Tempe, AZ (US);
Ellen Lan, Chandler, AZ (US);
William J Ooms, Chandler, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365 65 ; 365117 ;
Abstract
A multi-state non-volatile ferroelectric memory includes a field effect transistor having a gate insulator formed of ferroelectric material. The ferroelectric material is separated into regions of different characteristics, e.g. different thicknesses, different coercive field values, etc., so as to provide a plurality of different threshold voltages for the field effect transistor.