Cambridge, MA, United States of America

Elison De Nazareth Matioli


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2015-2018

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3 patents (USPTO):Explore Patents

Title: Elison De Nazareth Matioli: Innovator in Semiconductor Technology

Introduction

Elison De Nazareth Matioli is a prominent inventor based in Cambridge, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and efficiency of semiconductor devices.

Latest Patents

Matioli's latest patents include innovative solutions for reducing leakage current in semiconductor devices. One of his patents describes a semiconductor device that features a first region with a first semiconductor material and a second region with a second semiconductor material. This design includes a current blocking structure that effectively reduces current flow between the device's terminals. Another notable patent involves a diode with trenches in a semiconductor region, where conductive regions are recessed into the semiconductor. This electrode structure can enhance the performance of semiconductor devices, such as field effect transistors or diodes, by minimizing leakage current.

Career Highlights

Elison De Nazareth Matioli is affiliated with the Massachusetts Institute of Technology, where he continues to advance research in semiconductor technology. His work has garnered attention for its practical applications in improving device efficiency and performance.

Collaborations

Matioli has collaborated with esteemed colleagues, including Tomas Apostol Palacios and Bin Lu, contributing to the advancement of semiconductor innovations.

Conclusion

Elison De Nazareth Matioli is a key figure in the semiconductor industry, with a focus on developing technologies that enhance device performance. His contributions through patents and collaborations reflect his commitment to innovation in this critical field.

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