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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9293538 B1

PDFFull Text
Date of Patent:
Mar. 22, 2016

Filed:

Nov. 18, 2013

Diode having trenches in a semiconductor region

Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Tomas Apostol Palacios, Cambridge, MA (US);

Bin Lu, Boston, MA (US);

Elison de Nazareth Matioli, Cambridge, MA (US);

Assignee:

Massachusetts Institute of Technology, Cambridge, MA (US);

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

A Sefer

Assistant Examiner:

Dilinh Nguyen

Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 29/872 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/28264 (2013.01); H01L 29/1029 (2013.01); H01L 29/407 (2013.01); H01L 29/417 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H01L 29/8725 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Find Patent Forward Citations

Palacios, Tomas. (2016). Diode having trenches in a semiconductor region (U.S. Patent No. 9293538). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9293538

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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