The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Dec. 11, 2013
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Bin Lu, Boston, MA (US);
Elison de Nazareth Matioli, Cambridge, MA (US);
Tomas Apostol Palacios, Belmont, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 21/8258 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/30604 (2013.01); H01L 21/8258 (2013.01); H01L 29/0649 (2013.01); H01L 29/0688 (2013.01); H01L 29/1033 (2013.01); H01L 29/1079 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.