Gunma, Japan

Eiji Nishibe


Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 83(Granted Patents)


Location History:

  • Oizumi-machi, JP (2004 - 2005)
  • Gunma, JP (2002 - 2009)

Company Filing History:


Years Active: 2002-2009

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19 patents (USPTO):Explore Patents

Title: **Eiji Nishibe: Innovating in Semiconductor Technology**

Introduction

Eiji Nishibe, an accomplished inventor based in Gunma, Japan, has made significant contributions to the field of semiconductor technology. With a portfolio of 19 patents, Nishibe is recognized for his innovative methodologies in manufacturing semiconductor devices that enhance performance and efficiency.

Latest Patents

Among his notable inventions, Nishibe has developed a **method of manufacturing semiconductor devices** that includes a semiconductor resistor layer. This invention addresses and reduces the discrepancies between theoretical resistance values and measured resistance values. The process involves the formation of an interlayer insulation film over a semiconductor substrate, which is selectively etched to create contact holes that expose critical elements such as a polysilicon resistor layer, a source region, and a drain region. By designating the lengths between adjacent contact holes on the polysilicon resistor layer as lengths of resistor elements, ion implantation is then executed through these contact holes to create low resistance regions within the polysilicon layer. This approach promotes improved efficiency and accuracy in semiconductor device performance.

In addition, his patent titled **semiconductor device and method for manufacturing the same** outlines a design that incorporates a gate electrode positioned on a P-type semiconductor substrate, with both low and high concentration drain and source regions strategically placed to optimize functionality. These developments highlight Nishibe's commitment to advancing semiconductor technology and his innovative thinking in addressing industry challenges.

Career Highlights

Currently working at Sanyo Electric Co., Ltd., Eiji Nishibe has dedicated his career to enhancing processes and technologies in semiconductor manufacturing. His extensive experience in this field has allowed him to contribute meaningfully to various advancements that benefit both the company and the broader technology sector.

Collaborations

Eiji Nishibe has had the opportunity to collaborate with accomplished colleagues such as Shuichi Kikuchi and Takuya Suzuki. Together, they have worked on projects that push the boundaries of semiconductor innovation, reinforcing the importance of teamwork in the pursuit of technological excellence.

Conclusion

Eiji Nishibe's work exemplifies the spirit of innovation found within the semiconductor industry. With a remarkable number of patents and ongoing collaborations that fuel his endeavors, Nishibe continues to play a vital role in shaping the future of semiconductor technology. His dedication to reducing performance discrepancies and enhancing manufacturing processes reflects a deep commitment to advancing this critical field.

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