The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Apr. 10, 2001
Shuichi Kikuchi, Gunma, JP;
Eiji Nishibe, Gunma, JP;
Takuya Suzuki, Saitama, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A semiconductor device has a gate electrode formed extending on a first and second gate insulation films formed on P type semiconductor substrate, an N+ type source region adjacent to one end of the gate electrode, an N− type drain region facing said source region through a channel region, having high impurity concentration peak at a position of the predetermined depth at least in said substrate under said first gate insulation film, and formed so that high impurity concentration becomes low at a region near surface of the substrate, an N− type drain region formed so as to range to the N− type drain region, an N+ type drain region separated from the other end of said gate electrode and included in said N− type drain region, and an N type layer formed so as to span from one end portion of said first gate insulation film to said N+ type drain region.