Konan, Japan

Eiji Hayashi

This inventor holds 16 USPTO granted patents, primarily in Memory Device Technology. Top assignees: Agency of Industrial Science and Technology, Ministry of International Trade & Industry, Sandisk Technologies Inc.. Active years: 1984-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eiji Hayashi. Retrieved from https://idiyas.com/inventor/eiji-hayashi-t78i7ilu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 87.5

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 76(Granted Patents)


Location History:

  • Kohnan, JP (1984)
  • Konan, JP (1988 - 1997)
  • Yokkaichi, JP (2018)
  • Nagoya, JP (2004 - 2020)

Company Filing History:


Years Active: 1984-2020

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Areas of Expertise:
Three-Dimensional Memory
Resistive RAM
Polymerization
Fire Extinguishing
Dielectric Barrier Walls
Radical-Carrying Molecules
Perfluoroalkyl Compounds
Memory Elements
Read/Write Layer
Halogenides
Nitrogen-Containing Compounds
Bicyclo Ethers
16 patents (USPTO):Explore Patents

Title: Eiji Hayashi: Innovator in Three-Dimensional Memory Technology

Introduction

Eiji Hayashi is a prominent inventor based in Konan, Japan, known for his significant contributions to the field of memory technology. With a total of 16 patents to his name, he has made remarkable advancements in three-dimensional memory devices.

Latest Patents

One of his latest patents is titled "Three-dimensional memory device containing through-array contact via structures between dielectric barrier walls and methods of making the same." This invention involves forming an alternating layer stack of insulating layers and sacrificial material layers over a semiconductor substrate. Memory stack structures are created through this vertically-alternating layer stack, which includes the formation of barrier trenches or moat trenches. The process also involves forming backside recesses by etching the sacrificial material layers selectively.

Another notable patent is "Three-dimensional resistive random access memory containing self-aligned memory elements." This invention describes the formation of an alternating material stack of insulator lines and first electrically conductive material layers over a substrate. The process allows for the selective deposition of metal on the sidewalls of the conductive material layers, leading to the creation of self-aligned metal oxide lines that serve as resistive memory elements in a resistive random access memory (ReRAM) device.

Career Highlights

Eiji Hayashi has worked with esteemed organizations such as the Agency of Industrial Science and Technology and the Ministry of International Trade and Industry. His work has significantly impacted the development of advanced memory technologies.

Collaborations

Throughout his career, Eiji has collaborated with notable individuals, including Takashi Abe and Haruhiko Fukaya. These collaborations have contributed to the innovative advancements in memory technology.

Conclusion

Eiji Hayashi's contributions to three-dimensional memory technology and his extensive patent portfolio highlight his role as a leading inventor in the field. His work continues to influence the future of memory devices and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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