Agency of Industrial Science and Technology

Ministry of International Trade & Industry

Sandisk Technologies Inc.

Agency of Industrial Science and Technology Ministry of International

Other

Eiji Hayashi

Takashi Abe

Haruhiko Fukaya

Yoshio Hayakawa

Michiaki Sano

Akira Nakada

Naohito Yanagida

Hajime Baba

Tetsuo Shimizu

Steven J Radigan

Seje Takaki

Yoshitaka Otsu

Takuya Futase

Hirofumi Tokita

Masanori Terahara

Teruyuki Mine

Naoto Hojo

Taizo Ono

Kei Nozawa

Mahito Soeda

Hiroshi Okazaki

Shin Kikuchi

Shunji Nagase

Toshihide Tobitsuka

Hiroshige Muramatsu

Kazushi Komeda

Cheng Feng

An alternating layer stack of insulating layers and sacrificial material layers is formed over a semiconductor substrate, and memory stack structures are formed through the vertically-alternating layer stack. A pair of unconnected barrier trenches or a moat trench is formed through the alternating stack concurrently with formation of backside trenches. Backside recesses are formed by isotropically etching the sacrificial material layers selective to the insulating layers while a dielectric liner covers the barrier trenches or the moat trench. A vertically alternating sequence of the insulating plates and the dielectric spacer plates is provided between the pair of barrier trenches or inside the moat trench. Electrically conductive layers are formed in the backside recesses. A first conductive via structure is formed through the vertically alternating sequence concurrently with formation of a second conductive via structure through a dielectric material portion adjacent to the alternating stack.

Three-dimensional memory device containing through-array contact via structures between dielectric barrier walls and methods of making the same

An alternating material stack of insulator lines and first electrically conductive material layers is formed over a substrate, and is patterned to provide alternating stacks of insulating layers and first electrically conductive lines. A metal can be selectively deposited on the physically exposed sidewalls of the first electrically conductive material layers to form metal lines, while not growing from the surfaces of the insulator lines. The metal lines are oxidized to form metal oxide lines that are self-aligned to the sidewalls of the first electrically conductive lines. Vertically extending second electrically conductive lines can be formed as a two-dimensional array of generally pillar-shaped structures between the alternating stacks of the insulator lines and the first electrically conductive lines. Each portion of the metal oxide lines at junctions of first and second electrically conductive lines constitute a resistive memory element for a resistive random access memory (ReRAM) device.

Three-dimensional resistive random access memory containing self-aligned memory elements

An alternating stack of electrically conductive layers and electrically insulating layers is formed over global bit lines formed on a substrate. The alternating stack is patterned to form a line stack of electrically conductive lines and electrically insulating lines. Trench isolation structures are formed within each trench to define a plurality of memory openings laterally spaced from one another by the line stack in one direction and by trench isolation structures in another direction. The electrically conductive lines are laterally recessed relative to sidewall surfaces of the electrically insulating lines. A read/write memory material is deposited in recesses, and is anisotropically etched so that a top surface of a global bit line is physically exposed at a bottom of each memory opening. An electrically conductive bit line is formed within each memory opening to form a resistive random access memory device.

Concave word line and convex interlayer dielectric for protecting a read/write layer

Methods for providing low-molecular radicals, radical-carrying molecules, a polymerization catalyst containing them and processes for polymerization and polymers produced thereby

A method for extinguishing fire uses a gaseous fire-extinguishing agent having as an active component thereof a polyfluoro-tertiary amine represented by the following formula:

Method for extinguishing fire

A nitrogen-containing perfluoroalkyl bromide, a novel compound to the art, is represented by the formula, ##STR1## wherein Rf.sub.1 and Rf.sub.2 independently stand for a perfluoroalkyl group of one to five carbon atoms, provided that Rf.sub.1 and Rf.sub.2 are 1) separated from each other, 2) directly bonded to each other, 3) bonded to each other through the medium of an oxygen atom, or 4) bonded to each other through the medium of a nitrogen atom. This novel compound is produced by decarbonylating a nitrogen-containing perfluorocarboxylic acid bromide represented by the formula, ##STR2## by exposure to an ultraviolet light.

Nitrogen-containing perfluoroalkyl bromide and method for production

A nitrogen-containing perfluoroalkanoyl peroxide is provided which is represented by the formula: ##STR1## wherein Rf.sub.1 and Rf.sub.2 independently stand for an alkyl group of 1 to 5 carbon atoms, provided that Rf.sub.1 and Rf.sub.2 are joined to each other in one of the three patterns of union, 1) direct union, 2) union through the medium of an oxygen atom or 3) union through the medium of a nitrogen atom to form one of the three rings, i.e. five-membered ring, six-membered ring or seven-membered ring. The nitrogen-containing perfluoroalkanoyl peroxide is produced by a method which comprises oxidizing a compound represented by the following formula: ##STR2##

Nitrogen-containing perfluoroalkanoyl peroxide and method for production

A nitrogen-containing perfluoroalkanoyl peroxide is provided which is represented by the formula: ##STR1## wherein Rf.sub.1 and Rf.sub.2 independently stand for an alkyl group of 1 to 5 carbon atoms, provided that Rf.sub.1 and Rf.sub.2 are joined to each other in one of the three patterns of union, 1) direct union, 2) union through the medium of an oxygen atom or 3) union through the medium of a nitrogen atom to form one of the three rings, i.e. five membered ring, six-membered ring or seven-membered ring. The nitrogen-containing perfluoroalkanoyl peroxide is produced by a method which comprises oxidizing a compound represented by the following formula: ##STR2##

Nitrogen-containing perfluoralkanoyl peroxide and method for production

A perfluoroalkyl halogenide represented by the formula: ##STR1## wherein X stands for one element selected from the group consisting of iodine and bromine, R.sub.f for a perfluorohydrocarbon group, n for an integer in the range of 1 to 3, and m for an integer in the range of 1 to 3, provided that n and m satisfy the relationship, n.gtoreq.m, is produced by a method which consists essentially in subjecting a perfluorocarboxylic acid fluoride represented by the formula, ##STR2## wherein R.sub.f and n have the same meanings as defined above, to a thermal reaction with a lithium halogenide represented by XI, wherein X has the same meaning as defined above.

Method for direct conversion of fluorocarbonyl group into halogenides

Perfluorocarboxylic acid fluorides represented by the formula A-B, wherein A is either ##STR1## and B stands for a perfluoro-di-substituted amino group, and perfluoro(dialkylaminopropenes) represented by the formula A'-B', wherein A' stands for ##STR2## and B' has the same meaning as B defined above, are novel compounds. Methods for the production of these novel compounds are also disclosed.

Perfluoro(dialkylaminopropene) derivatives

Perfluorobicyclolactam compounds represented by the general formula: ##STR1## wherein --A-- stands for ##STR2## l, m, and n respectively stand for 0 or 1, 3 or 4, and 1 or 2, and R.sub.f stands for a lower perfluoroalkyl group, are novel compounds. These compounds are useful as intermediates for the synthesis of, e.g., functional macromolecular membranes and lubricants. These compounds are produced by subjecting compounds of the general formula: ##STR3## and fuming sulfuric acid to a thermal reaction.

Perfluorobicyclolactam compound and method for production thereof

Growing community of inventors

Konan, Japan

Eiji Hayashi