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For the Inventor, By the Inventor

Hinesburg, VT, United States of America

Edward W Sengle

USPTO Granted Patents = 9

Average Co-Inventor Count = 6.3

ph-index = 6

Forward Citations = 112(Granted Patents)


Company Filing History:

goldMedal9 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1998-2006

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):
1. 7132325 - Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure (2006-11-07),
2. 6770907 - Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure (2004-08-03),
3. 6624031 - Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure (2003-09-23),
4. 6394638 - Trench isolation for active areas and first level conductors (2002-05-28),
5. 6147394 - Method of photolithographically defining three regions with one mask (2000-11-14),
6. 6140171 - FET device containing a conducting sidewall spacer for local (2000-10-31),
7. 6063687 - Formation of trench isolation for active areas and first level conductors (2000-05-16),
8. 5972570 - Method of photolithographically defining three regions with one mask (1999-10-26),
9. 5734192 - Trench isolation for active areas and first level conductors (1998-03-31),

Title: Innovator Spotlight: Edward W Sengle - Pioneering Semiconductor Testing and Antifuse Technology

Introduction:

Edward W Sengle, a prominent inventor based in Hinesburg, VT, is known for his groundbreaking work in semiconductor testing and antifuse technology. With an impressive portfolio of 9 patents, Sengle has made significant contributions to the field of chip manufacturing and quality control.

Latest Patents:

Sengle's latest patents showcase his innovative approach to detecting semiconductor process stress-induced defects. His method involves providing a polysilicon-bounded test diode, stressing the diode, and monitoring it for spikes in gate current during the stress. This process encompasses determining the frequency distribution of the slope of the forward bias voltage versus the first region current and monitoring the diode for soft breakdown post-stress. Additionally, Sengle explores the use of a DRAM cell as a substitute for the diode, as well as the diode's application as an antifuse.

Career Highlights:

Edward W Sengle is affiliated with the renowned International Business Machines Corporation (IBM), where he continues to drive innovation in the semiconductor industry. His expertise and dedication have propelled him to the forefront of technological advancements, solidifying his reputation as a leading figure in the field.

Collaborations:

Throughout his illustrious career, Sengle has collaborated with esteemed professionals in the industry, including notable coworkers Jed Hickory Rankin and Wagdi William Abadeer. Together, they have collectively contributed to the development of cutting-edge solutions in semiconductor testing and antifuse technology.

Conclusion:

In conclusion, Edward W Sengle stands as a visionary inventor whose work has revolutionized semiconductor testing methodologies. His relentless pursuit of excellence and commitment to innovation have paved the way for advancements in the field, cementing his legacy as a pioneer in semiconductor technology.

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