Edward Paul Barth

Title: Edward Paul Barth: Innovator in Semiconductor Technology

Introduction

Edward Paul Barth is a notable inventor based in Ridgefield, CT (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work primarily focuses on advanced metallization insulating structures, which are crucial for the performance of integrated circuits.

Latest Patents

Among his latest patents is the "Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors." This patent describes a metallization insulating structure that incorporates a low-k interlevel dielectric layer (ILD). The ILD comprises a low-k dielectric layer, which is essential for reducing capacitance in semiconductor devices. Additionally, Barth's patent details a low-k dielectric film that is deposited under compressive stress, enhancing the overall performance of the dielectric layer.

Career Highlights

Edward Paul Barth is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the semiconductor space. His expertise in low-k materials and interconnect structures has positioned him as a key player in the development of next-generation electronic devices.

Collaborations

Barth has collaborated with esteemed colleagues such as John Anthony Fitzsimmons and Thomas H Ivers. Their combined efforts have led to advancements in semiconductor technology, furthering the capabilities of modern electronics.

Conclusion

Edward Paul Barth's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field. His innovative work continues to influence the development of advanced electronic devices.