The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
May. 16, 2001
Edward Paul Barth, Ridgefield, CT (US);
Stephan A. Cohen, Wappingers Falls, NY (US);
Chester Dziobkowski, Hopewell Junction, NY (US);
John Anthony Fitzsimmons, Poughkeepsie, NY (US);
Stephen McConnell Gates, Ossining, NY (US);
Thomas Henry Ivers, Hopewell Jct, NY (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
Darryl D. Restaino, Modena, NY (US);
Horatio Seymour Wildman, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.