The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2005

Filed:

Dec. 09, 2002
Applicants:

Edward Barth, Ridgefield, CT (US);

John A. Fitzsimmons, Poughkeepsie, NY (US);

Arthur W. Martin, Queens Village, NY (US);

Lee M. Nicholson, Katonah, NY (US);

Inventors:

Edward Barth, Ridgefield, CT (US);

John A. Fitzsimmons, Poughkeepsie, NY (US);

Arthur W. Martin, Queens Village, NY (US);

Lee M. Nicholson, Katonah, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2131 ;
U.S. Cl.
CPC ...
Abstract

The coating thickness and uniformity of spin-on deposition layers on semiconductor wafers is controlled through the in situ control of the viscosity and homogeneity of the mixture of precursor material and solvent material. The thickness of the deposited material is selected and the viscosity required at a given spin rate for the selected thickness is automatically mixed. Sensing and control apparatus are employed to ensure that the uniformity and viscosity required is maintained before dispensing onto said semiconductor wafer. Low-K dielectric materials of selected thickness are deposited in a uniform coating.


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