Ebrahim H Hargan

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Memory System Design. Top assignees: Micron Technology Incorporated, Round Rock Research, LLC. Active years: 2004-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ebrahim H Hargan. Retrieved from https://idiyas.com/inventor/ebrahim-h-hargan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 23 (Patent Applications = 1)

% Patents Active = 73.9

Average Co-Inventor Count = 1.4

ph-index = 8

Forward Citations = 289(Granted Patents)

Company Filing History:

22 out of 39,294

Micron Technology Incorporated

patents

1 out of 428

Round Rock Research, LLC

patents

Years Active: 2004-2020

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Areas of Expertise:

Memory System

Through Substrate Via

Stacked Device

Signal Transmission

Slew Rate Control

Data Encoding

Memory Malfunction Prediction

Conductive Path Connectivity

Redundant Memory Cells

Inter-symbol Interference

Multiple Device Apparatus

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10629502 - Apparatus and methods for through substrate via test (2020-04-21),

2. 10037926 - Apparatus and methods for through substrate via test (2018-07-31),

3. 9318394 - Apparatus and methods for through substrate via test (2016-04-19),

4. 8847619 - Apparatus and methods for through substrate via test (2014-09-30),

5. 8826101 - Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system (2014-09-02),

6. 8578591 - Method for manufacturing a stacked device conductive path connectivity (2013-11-12),

7. 8570860 - Redundant signal transmission (2013-10-29),

8. 8539312 - Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system (2013-09-17),

9. 8418014 - Multiple device apparatus, systems, and methods (2013-04-09),

10. 8174299 - Devices and methods for controlling a slew rate of a signal line (2012-05-08),

11. 8127204 - Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system (2012-02-28),

12. 8103928 - Multiple device apparatus, systems, and methods (2012-01-24),

13. 8063491 - Stacked device conductive path connectivity (2011-11-22),

14. 8023350 - Memory malfunction prediction system and method (2011-09-20),

15. 7977962 - Apparatus and methods for through substrate via test (2011-07-12),

Title: Ebrahim H Hargan: Pioneering Innovator in Through Substrate Via Technology

Introduction:

Ebrahim H Hargan, based in Boise, ID (US), is a visionary inventor whose dedication to innovation and passion for tackling complex problems has positioned him as a standout figure in the world of inventors.

Latest Patents:

With an impressive portfolio of 23 patents, Ebrahim H Hargan's recent inventions include groundbreaking advancements in "Apparatus and methods for through substrate via test." These patents revolve around enabling electrical connections and signal transfers within vertically-connected, horizontally-oriented integrated circuits using through substrate vias (TSVs), including through silicon vias. The innovative electronic apparatus, systems, and methods facilitate testing and replacing defective TSVs, offering new solutions to enhance circuit performance.

Career Highlights:

Throughout his career, Ebrahim H Hargan has made significant contributions to the technology sector. He has been associated with esteemed companies such as Micron Technology Incorporated and Round Rock Research, LLC, where his expertise and inventive mindset have propelled technological advancements.

Collaborations:

In his professional journey, Ebrahim H Hargan has collaborated with talented individuals like Layne G Bunker and Dragos Dimitriu. Together, they have worked on innovative projects, leveraging their collective skills to push the boundaries of technological possibilities.

Conclusion:

Ebrahim H Hargan's relentless pursuit of innovation and his exceptional problem-solving skills have solidified his position as a pioneering inventor in the realm of through substrate via technology. His remarkable contributions continue to drive progress in the field, shaping the future of integrated circuits and electronic systems.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: