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For the Inventor, By the Inventor

Boise, ID, United States of America

Ebrahim H Hargan

USPTO Granted Patents = 23 

Average Co-Inventor Count = 1.4

ph-index = 8

Forward Citations = 288(Granted Patents)


Company Filing History:

goldMedal22 out of 37,972 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 428 
 
Round Rock Research, LLC
 patents

Years Active: 2004-2020

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23 patents (USPTO):Explore Patents
1. 10629502 - Apparatus and methods for through substrate via test (2020-04-21),
2. 10037926 - Apparatus and methods for through substrate via test (2018-07-31),
3. 9318394 - Apparatus and methods for through substrate via test (2016-04-19),
4. 8847619 - Apparatus and methods for through substrate via test (2014-09-30),
5. 8826101 - Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system (2014-09-02),
6. 8578591 - Method for manufacturing a stacked device conductive path connectivity (2013-11-12),
7. 8570860 - Redundant signal transmission (2013-10-29),
8. 8539312 - Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system (2013-09-17),
9. 8418014 - Multiple device apparatus, systems, and methods (2013-04-09),
10. 8174299 - Devices and methods for controlling a slew rate of a signal line (2012-05-08),
11. 8127204 - Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system (2012-02-28),
12. 8103928 - Multiple device apparatus, systems, and methods (2012-01-24),
13. 8063491 - Stacked device conductive path connectivity (2011-11-22),
14. 8023350 - Memory malfunction prediction system and method (2011-09-20),
15. 7977962 - Apparatus and methods for through substrate via test (2011-07-12),

Title: Ebrahim H Hargan: Pioneering Innovator in Through Substrate Via Technology

Introduction:

Ebrahim H Hargan, based in Boise, ID (US), is a visionary inventor whose dedication to innovation and passion for tackling complex problems has positioned him as a standout figure in the world of inventors.

Latest Patents:

With an impressive portfolio of 23 patents, Ebrahim H Hargan's recent inventions include groundbreaking advancements in "Apparatus and methods for through substrate via test." These patents revolve around enabling electrical connections and signal transfers within vertically-connected, horizontally-oriented integrated circuits using through substrate vias (TSVs), including through silicon vias. The innovative electronic apparatus, systems, and methods facilitate testing and replacing defective TSVs, offering new solutions to enhance circuit performance.

Career Highlights:

Throughout his career, Ebrahim H Hargan has made significant contributions to the technology sector. He has been associated with esteemed companies such as Micron Technology Incorporated and Round Rock Research, LLC, where his expertise and inventive mindset have propelled technological advancements.

Collaborations:

In his professional journey, Ebrahim H Hargan has collaborated with talented individuals like Layne G Bunker and Dragos Dimitriu. Together, they have worked on innovative projects, leveraging their collective skills to push the boundaries of technological possibilities.

Conclusion:

Ebrahim H Hargan's relentless pursuit of innovation and his exceptional problem-solving skills have solidified his position as a pioneering inventor in the realm of through substrate via technology. His remarkable contributions continue to drive progress in the field, shaping the future of integrated circuits and electronic systems.

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