Xining, China

Duxiang Wang

This inventor holds 2 USPTO granted patents. Top assignee: Quanzhou Sanan Semiconductor Technology Co., Ltd.. Active years: 2022-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Duxiang Wang. Retrieved from https://idiyas.com/inventor/duxiang-wang-6sja07hw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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2 patents (USPTO):Explore Patents

Title: Duxiang Wang: Innovator in Semiconductor Technology

Introduction

Duxiang Wang is a prominent inventor based in Xiqing, China. He has made significant contributions to the field of semiconductor technology, particularly in light-emitting devices. With a total of 2 patents to his name, Wang continues to push the boundaries of innovation in this critical area.

Latest Patents

Wang's latest patents include a groundbreaking semiconductor light-emitting device that features an aluminum gallium indium phosphorus (ALGAINP) window layer. This device comprises a semiconductor light-emitting sequence, which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light-emitting layer situated between them. The design incorporates a first electrode connected to the first conductive type semiconductor layer and a second electrode linked to the second conductive type semiconductor layer. The ALGAINP window layer serves as an ohmic contact layer, facilitating efficient electrical contact.

Another notable patent is for a flip-chip light-emitting device and its production method. This device consists of a transparent substrate, an epitaxial light-emitting structure, and a transparent bonding layer that is interposed between the substrate and the light-emitting structure. The protective insulating layer is placed over both the light-emitting structure and the bonding layer. The innovative design features a smaller-thickness section with a first contact surface for the insulating layer, and a larger-thickness section that meshes with the roughened bottom surface of the light-emitting structure.

Career Highlights

Duxiang Wang is currently employed at Quanzhou Sanan Semiconductor Technology Co., Ltd. His work at this company has positioned him as a key player in the development of advanced semiconductor technologies. His expertise and innovative approach have contributed to the company's reputation in the industry.

Collaborations

Wang has collaborated with notable colleagues such as Weiping Xiong and Xin Wang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor technology.

Conclusion

Duxiang Wang is a distinguished inventor whose work in semiconductor technology has led to significant advancements in light-emitting devices. His innovative patents and contributions to Quanzhou Sanan Semiconductor Technology Co., Ltd. highlight his commitment to pushing the boundaries of technology. Wang's ongoing efforts continue to shape the future of the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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