The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Sep. 24, 2021
Applicant:

Quanzhou Sanan Semiconductor Technology Co., Ltd, Fujian, CN;

Inventors:

Huiwen Li, Tianjin, CN;

Dongyan Zhang, Tianjin, CN;

Kuanfu Pan, Tianjin, CN;

Shaohua Huang, Tianjin, CN;

Duxiang Wang, Tianjin, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01); H10H 20/824 (2025.01); H10H 20/832 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/824 (2025.01); H10H 20/832 (2025.01); H10H 20/857 (2025.01);
Abstract

A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive type semiconductor layer, and a second electrode electrically connected to the second conductive type semiconductor layer. The first conductive type semiconductor layer includes an aluminum gallium indium phosphorus window layer as an ohmic contact layer forming contact between the first electrode and the first conductive type semiconductor layer.


Find Patent Forward Citations

Loading…