This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 1980.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1980
Title: Dov Frohman-Bentchkowsky: Innovator in Memory Technology
Introduction
Dov Frohman-Bentchkowsky is a notable inventor based in Haifa, Israel. He is recognized for his contributions to the field of memory technology, particularly in the development of electrically programmable and erasable memory devices. His innovative work has had a significant impact on the advancement of integrated circuit memories.
Latest Patents
Frohman-Bentchkowsky holds a patent for an "Electrically programmable and erasable MOS floating gate memory device." This invention describes a memory device that is both electrically programmable and erasable, making it suitable for high-density integrated circuit applications. The technology involves tunneling carriers between a floating conductive gate and a doped region in the substrate to program and erase the device. A minimum area of thin oxide, ranging from 70 A to 200 A, is utilized to separate the doped region from the floating gate. Additionally, in one embodiment, a second layer of polysilicon is employed to protect the thin oxide region during specific processing steps.
Career Highlights
Dov Frohman-Bentchkowsky has had a distinguished career, primarily working with Intel Corporation. His role at Intel has allowed him to contribute to cutting-edge technology in the semiconductor industry. His innovative spirit and technical expertise have positioned him as a key figure in the development of advanced memory solutions.
Collaborations
Throughout his career, Frohman-Bentchkowsky has collaborated with notable colleagues, including Jerry Mar and George Perlegos. These collaborations have fostered an environment of innovation and have led to significant advancements in memory technology.
Conclusion
Dov Frohman-Bentchkowsky's contributions to the field of memory technology exemplify the spirit of innovation. His patented work on electrically programmable and erasable memory devices continues to influence the development of high-density integrated circuits. His career at Intel Corporation and collaborations with esteemed colleagues further highlight his impact on the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
