The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1980
Filed:
Dec. 15, 1978
Applicant:
Inventors:
Dov Frohman-Bentchkowsky, Haifa, IL;
Jerry Mar, Sunnyvale, CA (US);
George Perlegos, Cupertino, CA (US);
William S Johnson, Palo Alto, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365185 ; 307238 ; 357 41 ;
Abstract
An electrically programmable and electrically erasable MOS memory device suitable for high density integrated circuit memories is disclosed. Carriers are tunneled between a floating conductive gate and a doped region in the substrate to program and erase the device. A minimum area of thin oxide (70 A-200 A) is used to separate this doped region from the floating gate. In one embodiment, a second layer of polysilicon is used to protect the thin oxide region during certain processing steps.