San Jose, CA, United States of America

Douk Hyoun Ryu

USPTO Granted Patents = 2 

Average Co-Inventor Count = 1.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: Biography of Douk Hyoun Ryu

Introduction

Douk Hyoun Ryu is an innovative inventor based in San Jose, California. He has made significant contributions to the field of memory devices, particularly in resistive random-access memory (RRAM) technology. With a total of two patents to his name, Ryu continues to push the boundaries of electronic memory solutions.

Latest Patents

Ryu's latest patents include a RRAM memory device and a method thereof. This invention discloses a resistive random-access memory device that contains a plurality of bit cells, word lines, bit lines, and source lines. Each bit cell comprises a transistor and a resistive element, with the transistor featuring a gate, source, and drain. The resistive element is coupled to the drain of the transistor, enhancing the device's functionality. Another notable patent involves circuits and read methods of RRAM, which includes a sense module that compares data voltage generated by current flow to a reference voltage, ensuring efficient memory operation.

Career Highlights

Ryu is currently employed at Windbond Electronics Corporation, where he applies his expertise in memory technology. His work focuses on developing advanced memory solutions that cater to the growing demands of the electronics industry. His innovative approach has positioned him as a key player in the field.

Collaborations

Throughout his career, Ryu has collaborated with various professionals and institutions in the electronics

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