The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Jun. 12, 2014
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Douk Hyoun Ryu, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 23/528 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); H01L 23/528 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/16 (2013.01);
Abstract

A resistive random-access memory (RRAM) device and a method thereof are disclosed. The RRAM device is contains a plurality of bit cells, a plurality of word lines, a plurality of bit lines and a plurality of source lines. Each bit cell includes a transistor and resistive element, the transistor includes a gate, a source and a drain, and the resistive element is coupled to the drain of the transistor. The plurality of word lines are arranged in parallel to one another, and coupled to respective gates of the transistors. The plurality of bit lines are arranged in parallel to one another and being intersected with the plurality of word lines, and coupled to respective drains of the transistors through the resistive elements. The plurality of source lines are arranged in parallel to one another and the plurality of bit lines.


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