Suzhou, China

Donghua Bai

This inventor holds 2 USPTO granted patents. Top assignee: Innoscience (Suzhou) Technology Co., Ltd.. Active years: 2023-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donghua Bai. Retrieved from https://idiyas.com/inventor/donghua-bai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2024

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2 patents (USPTO):Explore Patents

Title: Innovations of Donghua Bai in GaN-Based Devices

Introduction

Donghua Bai is a notable inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN)-based devices. With a total of two patents to his name, Bai's work focuses on enhancing the performance and measurement accuracy of these advanced devices.

Latest Patents

Donghua Bai's latest patents include a "System and method for measuring intermittent operating life of GaN-based device" and an "Apparatus and method for measuring dynamic on-resistance of GaN-based device." The first patent provides a comprehensive system for measuring the intermittent operating life of a GaN-based device under test (DUT). This system operates in various modes, including stressing, cooling, and measuring. It employs a power regulation approach to ensure consistent temperature increases during testing, thereby improving measurement accuracy by controlling the junction temperature of the device. The second patent outlines an apparatus and method for measuring the dynamic on-resistance of a DUT. This invention includes a control terminal connected to a controlling module that generates signals to switch the DUT on and off, allowing for precise measurements of the device's performance.

Career Highlights

Donghua Bai is currently employed at Innoscience Technology Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of GaN-based devices, which are critical for various applications in electronics.

Collaborations

Throughout his career, Bai has collaborated with talented individuals such as Rong Yang and Sichao Li. These collaborations have fostered a productive environment for innovation and development in their respective fields.

Conclusion

Donghua Bai's contributions to the field of GaN-based devices through his patents and collaborations highlight his role as a significant inventor in semiconductor technology. His work continues to influence advancements in this critical area of research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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