Dong-Seog Eun

Title: Innovations of Dong-Seog Eun in Semiconductor Technology

Introduction

Dong-Seog Eun is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work primarily focuses on methods for forming semiconductor devices and nonvolatile memory devices.

Latest Patents

One of his latest patents is a method of forming a semiconductor device. This method includes forming a first trench in a semiconductor substrate, creating first device isolation patterns that fill the trench, and forming spacers on the sidewalls of these patterns. Additionally, a second trench is formed in the substrate between the first device isolation patterns, with second device isolation patterns filling this trench. The process utilizes an etching method that adopts the first device isolation pattern and the spacer as a mask.

Another notable patent is related to a nonvolatile memory device and the method of forming it. This device features a floating gate situated on a first active region that is doped with a first-conductivity-type dopant. The floating gate itself is also doped with this type of dopant, allowing for a thinner tunnel insulation layer. This innovation enhances the threshold voltage of the nonvolatile memory cell, improving the endurance of the tunnel insulation layer and the data retention characteristics of the memory cell.

Career Highlights

Dong-Seog Eun is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has positioned him as a key player in advancing semiconductor technologies.

Collaborations

He has collaborated with notable coworkers, including Sung-Nam Chang and Jung-Dal Choi, contributing to various innovative projects within the company.

Conclusion

Dong-Seog Eun's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his significant role in advancing the field. His innovations continue to impact the development of more efficient semiconductor and memory devices.