The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jul. 21, 2008
Dong-won Chang, Seoul, KR;
Sung-nam Chang, Seoul, KR;
Seung-gun Seo, Seoul, KR;
Dong-seog Eun, Seoul, KR;
Dong-Won Chang, Seoul, KR;
Sung-Nam Chang, Seoul, KR;
Seung-Gun Seo, Seoul, KR;
Dong-Seog Eun, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semiconductor substrate between first device isolation patterns, and forming second device isolation patterns that fill the second trench. The second trench is formed using an etching process adopting the first device isolation pattern and the spacer as a mask.