Donald L Hughes, Jr

Title: The Innovations of Donald L Hughes, Jr.

Introduction

Donald L Hughes, Jr. is a notable inventor based in Mesa, AZ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on capacitive pressure sensors, which are essential in various applications.

Latest Patents

Hughes' latest patents include a "Method of forming an integrated CMOS capacitive pressure sensor." This invention utilizes a diaphragm formed alongside the gates of active devices on the same semiconductor substrate. Another significant patent is for a "Capacitive pressure sensor and method of fabricating same." This patent describes a layered structure that includes multiple silicon and insulating layers, with a method for mechanically reducing the thickness of the second silicon layer to a predetermined thickness. The innovative design allows for enhanced performance and reliability in pressure sensing applications.

Career Highlights

Throughout his career, Hughes has worked with prominent companies such as Motorola Corporation and Freescale Semiconductor, Inc. His experience in these organizations has contributed to his expertise in semiconductor technologies and sensor design.

Collaborations

Hughes has collaborated with notable professionals in the field, including Bertrand Francis Cambou and Bishnu Prasanna Gogoi. These collaborations have likely enriched his work and led to further advancements in his inventions.

Conclusion

Donald L Hughes, Jr. is a distinguished inventor whose work in capacitive pressure sensors has made a significant impact in the semiconductor industry. His innovative patents and collaborations reflect his dedication to advancing technology.