The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1995
Filed:
Mar. 03, 1992
Bertrand F Cambou, Mesa, AZ (US);
Donald L Hughes, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method is provided for making a power device (54) and a small signal device (52) on a bonded silicon substrate (41). A first silicon substrate (10) provided. A first surface (17) is etched to form a plurality of cavities (11) with a depth (13). A dielectric layer (14) is created on the first surface (17), wherein the dielectric layer (14) is created with a thickness less than or equal to the depth of the plurality of cavities. The dielectric layer (14) is patterned so that a plurality of islands (22) of dielectric remain in the cavities. A second silicon substrate (42) is provided. The first and the second silicon substrates (10, 42) are bonded together in such a manner that the islands (22) are buried. A predetermined portion of the first silicon substrate (10) is removed, thereby creating a surface that is suitable for semiconductor device fabrication.