Do-hwan Kim

Title: The Innovative Contributions of Do-hwan Kim

Introduction

Do-hwan Kim is a prominent inventor based in Anyang-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of image sensors and light-emitting devices. With a total of nine patents to his name, Kim's work has had a substantial impact on the industry.

Latest Patents

One of Kim's latest patents is for a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and the method of manufacturing it. This innovation includes a light-receiving unit with first through third photodiode layers that are sequentially stacked, an integrated circuit formed below the light-receiving unit, and electrode layers that connect with a transistor of the IC. Another notable patent is for a light-emitting device that comprises a first electrode on a substrate, a first emission layer, a buffer layer, a middle electrode, a second emission layer, and a second electrode. The buffer layer is made from materials such as metal oxide and polyelectrolyte, and the fabrication process utilizes a wet method.

Career Highlights

Throughout his career, Do-hwan Kim has worked with leading organizations, including Samsung Electronics Co., Ltd. and the University of California. His experience in these prestigious institutions has allowed him to refine his skills and contribute to groundbreaking advancements in technology.

Collaborations

Kim has collaborated with notable colleagues, including Bang-lin Lee and Sang-Yoon Lee. These partnerships have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies.

Conclusion

Do-hwan Kim's contributions to the field of semiconductor technology are noteworthy and impactful. His innovative patents and collaborations with esteemed organizations and individuals highlight his role as a leading inventor in the industry.