Samsung Electronics Co., Ltd.

University of California

Do-hwan Kim

Bang-lin Lee

Sang-Yoon Lee

Kyung-bae Park

Yong-wan Jin

Woong Il Choi

Kyu-sik Kim

Kwang-hee Lee

Jeong-il Park

Yong Wan Jin

Jae-young Choi

Sang Yoon Lee

Jeong Il Park

Alan J Heeger

Jong Won Chung

Bang Lin Lee

Kwanghee Lee

Eun-Kyung Lee

Seok-Ha Lee

Soo-Ghang Ihn

Byung-wook Yoo

Eun-jeong Jeong

Shinuk Cho

Ji-Youl Lee

Sung Heum Park

Yu-Yeon Yu

Kook-min Han

Hyun-sik Moon

Jae-Kwan Lee

Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same

A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

Light emitting device and method of fabricating the same

Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure

An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.

Organic semiconductor composition, and transistor and electronic device including a polymer therefrom

An organic semiconductor polymer, a transistor including an organic semiconductor polymer and methods of fabricating the same are provided, the organic semiconductor polymer including an aromatic or heteroaromatic main chain and at least one of a fluoro or a perfluoroalkyl at a polymer terminal end.

Organic semiconductor polymer, transistor including an organic semiconductor polymer and methods of fabricating the same

A method for operating image sensors is provided. The method for operating image sensors includes maintaining a charge transmission unit which transfers charges generated in a photoelectric conversion unit by responding to incident light to a charge detection unit in an inactive state; and toggling the charge transmission unit between an active state and an inactive state while a reset unit resets the charge detection unit, wherein the toggling is repeated multiple times while a reset unit which resets the charge detection unit is maintained in active state.

Methods for operating image sensors

A layered structure including graphene, wherein a basal plane of the graphene is a (0001) plane; and a layer including an organic material having a conjugated system disposed on the graphene, wherein the layer comprising the organic material layer having the conjugated system is bound to the (0001) plane of the graphene by a &#x3c0;-&#x3c0; interaction, and a method of preparing the same.

Layered structure including graphene and an organic material having a conjugated system, and method of preparing the same

An organic semiconducting copolymer according to example embodiments may be represented by Formula 1 below: An organic electronic device may include the above organic semiconducting copolymer. The organic semiconducting copolymer according to example embodiments may provide improved solubility, processability, and thin film properties. Consequently, the organic semiconducting copolymer may be used in a variety of electronic devices. A suitable electronic device may be an organic thin film transistor. When an active layer of an organic thin film transistor includes the organic semiconducting copolymer, higher charge mobility and lower breaking leakage current may be achieved.

Organic semiconducting copolymer and organic electronic device including the same

Growing community of inventors

Anyang-si, South Korea

Do-hwan Kim