The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Feb. 01, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyung-bae Park, Seoul, KR;

Kyu-sik Kim, Jeonju-si, KR;

Yong-wan Jin, Seoul, KR;

Woong Choi, Seongnam-si, KR;

Kwang-hee Lee, Suwon-si, KR;

Do-hwan Kim, Anyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/30 (2006.01); H01L 27/12 (2006.01); H01L 23/58 (2006.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14647 (2013.01); H01L 27/14667 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H01L 23/585 (2013.01); H01L 27/1214 (2013.01); H01L 27/14609 (2013.01); H01L 33/08 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.


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