This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Difei Huang: Innovator in Memory Technology
Introduction
Difei Huang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, showcasing his expertise through innovative patents. His work is instrumental in advancing memory systems that are crucial for modern computing.
Latest Patents
Difei Huang holds a patent for a memory, operation method of memory, and memory system. This patent describes a memory that includes a bit line discharge circuit and a bit line coupled to the discharge circuit. The discharge circuit features a transistor, a control branch, and a first discharge branch. The transistor's gate is connected to the control branch, while one of its source or drain is linked to the first discharge branch. The other source or drain connects to the bit line. The control branch is designed to activate the transistor, and the first discharge branch is configured to discharge the bit line at a predetermined speed when the transistor is turned on. This innovation enhances the efficiency and performance of memory systems.
Career Highlights
Difei Huang is currently employed at Yangtze Memory Technologies, Ltd., where he continues to develop cutting-edge memory solutions. His work at this company reflects his commitment to advancing technology in the memory sector.
Collaborations
Difei Huang collaborates with talented colleagues, including Chong Jin and Jing Zhang. Their combined expertise fosters a creative environment that drives innovation in memory technology.
Conclusion
Difei Huang is a key figure in the field of memory technology, with a notable patent that contributes to the efficiency of memory systems. His work at Yangtze Memory Technologies, Ltd. and collaborations with skilled coworkers further highlight his impact on the industry.