The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jul. 17, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Chong Jin, Wuhan, CN;

Jing Zhang, Wuhan, CN;

Yan Wang, Wuhan, CN;

Teng Chen, Wuhan, CN;

Difei Huang, Wuhan, CN;

Ke Liang, Wuhan, CN;

Jie MA, Wuhan, CN;

Weiwei He, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 5/06 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 5/063 (2013.01); G11C 5/14 (2013.01);
Abstract

According to some aspects, a memory includes a bit line discharge circuit and a bit line coupled to the bit line discharge circuit. The bit line discharge circuit includes a transistor, a control branch, and a first discharge branch. A gate of the transistor is connected with the control branch. One of a source or a drain of the transistor is connected with the first discharge branch. Another of the source or the drain of the transistor is connected with the bit line. The control branch is configured to turn on the transistor. The first discharge branch is configured to discharge the bit line at a set discharge speed when the transistor is turned on.


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