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For the Inventor, By the Inventor

Highland, CA, United States of America

Di Li

This inventor holds 18 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Memory Devices. Top assignees: Micron Technology Incorporated, Cypress Semiconductor Corporation. Active years: 2007-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Di Li. Retrieved from https://idiyas.com/inventor/di-li-kcm7hvgn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 88.9

 

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 185(Granted Patents)


Location History:

  • Boise, ID (US) (2007 - 2014)
  • Highland, CA (US) (2011 - 2017)

Company Filing History:

goldMedal16 out of 39,253 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 3,597 
 
Cypress Semiconductor Corporation
 patents

Years Active: 2007-2017

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Areas of Expertise:
Flash Memory
Floating Gate Transistors
NAND Programming
Memory Cell Channels
Doped Regions
Electronic Systems
Field-Effect Transistors
Halogen Ion Implantation
Non-Volatile Memory
Word Line Structures
Select Gate Structures
18 patents (USPTO):Explore Patents
1. 9564331 - Apparatus and method for rounded ONO formation in a flash memory device (2017-02-07),
2. 9449690 - Modified local segmented self-boosting of memory cell channels (2016-09-20),
3. 9356157 - Semiconductor devices comprising floating gate transistors and methods of forming such semiconductor devices (2016-05-31),
4. 8729621 - Memory devices comprising word line structures, at least one select gate structure, and a plurality of doped regions (2014-05-20),
5. 8717819 - NAND flash memory programming (2014-05-06),
6. 8716075 - Floating body field-effect transistors, and methods of forming floating body field-effect transistors (2014-05-06),
7. 8686487 - Semiconductor devices and electronic systems comprising floating gate transistors (2014-04-01),
8. 8580645 - Memory devices and methods of forming memory devices (2013-11-12),
9. 8415223 - Memory devices and methods of forming memory devices (2013-04-09),
10. 8395214 - Floating body field-effect transistors, and methods of forming floating body field-effect transistors (2013-03-12),
11. 8223549 - NAND flash memory programming (2012-07-17),
12. 8129781 - Method of forming memory devices by performing halogen ion implantation and diffusion processes (2012-03-06),
13. 7948008 - Floating body field-effect transistors, and methods of forming floating body field-effect transistors (2011-05-24),
14. 7824994 - Method of forming memory devices by performing halogen ion implantation and diffusion processes (2010-11-02),
15. 7626866 - NAND flash memory programming (2009-12-01),

Title: The Innovative Contributions of Di Li

Introduction

Di Li is a prominent inventor based in Highland, California, known for his significant contributions to the field of memory devices. With a total of 18 patents to his name, he has made remarkable advancements in technology that enhance the performance and efficiency of flash memory systems.

Latest Patents

One of Di Li's latest patents is titled "Apparatus and method for rounded ONO formation in a flash memory device." This invention describes a method and apparatus for the continuous formation of a rounded charge trapping layer in a flash memory device. The design includes a semiconductor layer with a source/drain region and an isolation region adjacent to it. A first insulator is placed above the source/drain region, and a charge trapping layer is integrated within this insulator. This charge trapping layer features a bulk portion along with a first and second tip on either side, extending beyond the width of the source/drain region. Additionally, a second insulator is positioned above the charge trapping layer, topped with a polysilicon gate structure that is wider than the source/drain region.

Another notable patent is "Modified local segmented self-boosting of memory cell channels." This invention outlines a method for programming a memory system by selectively applying a program voltage to a chosen wordline connected to a memory transistor. The process involves applying various bias voltages to adjacent wordlines, ensuring that the programming is efficient and effective.

Career Highlights

Throughout his career, Di Li has worked with leading companies in the semiconductor industry, including Micron Technology Incorporated and Cypress Semiconductor Corporation. His experience in these organizations has allowed him to develop innovative solutions that address complex challenges in memory technology.

Collaborations

Di Li has collaborated with notable professionals in his field, including Seiichi Aritome and Kirk D Prall. These partnerships have contributed to the advancement of his inventions and the overall progress in memory device technology.

Conclusion

Di Li's contributions to the field of memory devices through his innovative patents and collaborations highlight his role as a key inventor in the technology sector. His work continues to influence advancements in flash memory systems, showcasing the importance of innovation in this rapidly evolving industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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