Munich, Germany

Dezsoe Takacs


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1982

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1 patent (USPTO):Explore Patents

Title: The Innovations of Dezsoe Takacs

Introduction

Dezsoe Takacs is a notable inventor based in Munich, Germany. He has made significant contributions to the field of memory technology, particularly in the development of advanced memory cell arrangements. His work has implications for very large scale integration (VLSI) technology, which is crucial for modern electronic devices.

Latest Patents

Takacs holds a patent for the MNOS Memory Cell. This invention relates to a MNOS memory cell arrangement in VLSI technology, which features a multi-layer gate insulating layer covering a semiconductor body between the source and drain zones. To prevent breakdowns at the edges of these zones before an erasure voltage is reached, the gate electrode is divided into two electrodes that can be operated differently and are superimposed on one another. These gate electrodes are connected through self-aligned, overlapped contacts. This innovative arrangement effectively resolves the issue of 'short channel erasure' in VLSI technology and can be applied to MNOS EEPROM memory devices. Takacs has 1 patent to his name.

Career Highlights

Dezsoe Takacs is currently employed at Siemens Aktiengesellschaft, a leading global technology company. His role at Siemens allows him to work on cutting-edge technologies and contribute to advancements in the field of electronics and memory systems.

Collaborations

Throughout his career, Takacs has collaborated with esteemed colleagues such as Erwin P Jacobs and Ulrich Schwabe. These collaborations have likely enriched his work and contributed to the success of his inventions.

Conclusion

Dezsoe Takacs is a prominent figure in the field of memory technology, with a focus on innovative solutions for VLSI applications. His contributions, particularly the MNOS Memory Cell, demonstrate his commitment to advancing electronic memory systems. His work continues to influence the development of modern technology.

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