Company Filing History:
Years Active: 2017-2018
Title: Deepanjan Datta: Innovator in Magnetic Memory Technology
Introduction
Deepanjan Datta is a prominent inventor based in Singapore, known for his contributions to the field of magnetic memory technology. With a total of 3 patents to his name, he has made significant strides in the development of advanced memory devices.
Latest Patents
One of his latest patents is titled "System and method for modular simulation of spin transfer torque magnetic random access memory devices." This invention outlines a system for simulating the behavior of spin transfer torque magnetic random access memory (STT-MRAM) devices. It includes a hardware processor and logic instructions that configure a library of functional blocks to capture the physical phenomena of the STT-MRAM elements. The mapping of selected elements into a set of functional blocks allows for the creation of a spin device circuit that replicates the magnetic stack.
Another notable patent is "Voltage-tunable magnetic devices for communication applications." This invention describes magnetic devices that include a magnetic tunnel junction (MTJ) element. The MTJ element features electrodes that interact with a strain-induced magnetoelectric unit to tune the precessional frequency of the free layer, enabling the detection of desired radio frequencies through Rabi oscillation.
Career Highlights
Deepanjan Datta is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to innovate in the field of magnetic memory technology. His work has positioned him as a key player in the development of next-generation memory devices.
Collaborations
He collaborates with talented coworkers such as Vinayak Bharat Naik and Murali V R M Kota, contributing to a dynamic and innovative work environment.
Conclusion
Deepanjan Datta's contributions to magnetic memory technology through his patents and work at Globalfoundries Singapore Pte. Ltd. highlight his role as a leading inventor in this field. His innovative approaches continue to shape the future of memory devices.
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