Globalfoundries Singapore Pte. Ltd.

Deepanjan Datta

Vinayak Bharat Naik

Murali V R M Kota

Francis Lionel Benistant

Bhagawan Sahu

A system and method for simulating behavior of a spin transfer torque magnetic random access memory (STT-MRAM) device includes a hardware processor (HP) and logic instructions (LI) stored in memory. The LI are executed by the HP to configure a library of functional blocks (FBs) to capture physical phenomenon of at least one element of the STT-MRAM configured in the form of a magnetic stack. Selected elements of the stack are mapped into a set of selected FBs (SFBs). The mapping converts the stack to a spin device circuit (SDC) represented by the SFBs. The SFBs are assembled to form the SDC replicating the stack. The SDC includes an electron spin transport, a magnet-dynamics, a magnetic coupling and a coupled electron transport+magnet-dynamics FBs. A set of output parameters simulating the STT-MRAM is generated by the SFBs in response to receiving a set of input parameters.

System and method for modular simulation of spin transfer torque magnetic random access memory devices

Magnetic devices and methods for forming a magnetic device are disclosed. The magnetic device includes a MTJ element. The MTJ element has first and second MTJ terminals which include first and second electrodes. The free layer of the MTJ element includes a natural precessional frequency which undergoes Rabi oscillation in the presence of a radio frequency (RF) matching the natural precessional frequency. A strain induced magnetoelectric (SIM) unit contacts one of the electrodes proximate to the free layer of the MTJ element while a digital line is coupled to the SIM unit. A desired voltage is provided on the digital line to cause the SIM unit to produce a desired strain on the electrode proximate to the free layer to tune the precessional frequency of the free layer to a desired precessional frequency for detecting a desired RF by the magnetic device. The desired RF causes a change in current through the MTJ element due to Rabi oscillation.

Voltage-tunable magnetic devices for communication applications

Spin switch devices with voltage controlled magnetism in ultra-low power usage applications are disclosed. The spin switch devices may be configured to provide ultra-low power and ultra-high speed switching by directly controlling drain or gate electron spins via electric field induced magnetic anisotropy tuned with finite gate voltage. A lateral spin switch with voltage controlled magnetic drain is placed in an 'OFF' or an 'ON' state by controlling the gate voltage to be equal to 0 or greater than 0 volts respectively. A vertical spin switch with voltage controlled magnetic gate is placed in an &#x201c;OFF&#x201d; or an &#x201c;ON&#x201d; state by controlling a value of the gate voltage to be less than a threshold voltage or greater than the threshold voltage respectively. A voltage controlled complementary switch provides a very large gain by controlling a value of the gate voltage to be equal to 0 volts.

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Singapore, Singapore

Deepanjan Datta