This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: The Innovations of De Jhong Liao
Introduction
De Jhong Liao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on methods that enhance the efficiency and effectiveness of semiconductor manufacturing processes.
Latest Patents
One of Liao's notable patents is titled "Method for gap filling with selectively formed seed layer and heteroepitaxial cap layer." This patent describes a method for selectively forming a seed layer over semiconductor fins. The embodiments of this patent provide a technique for forming the selective seed layer using mono-silane at an increased temperature. Additionally, it includes the deposition of a hetero-crystalline silicon cap layer over the bottom-up gap layer to improve gap filling and tune profiles of fin structures. Liao holds 1 patent in this area.
Career Highlights
De Jhong Liao is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work at this company has allowed him to contribute to advancements in semiconductor manufacturing techniques.
Conclusion
De Jhong Liao's innovative methods in semiconductor technology demonstrate his expertise and commitment to improving manufacturing processes. His contributions are valuable to the ongoing evolution of the semiconductor industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile