The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Aug. 11, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ya-Wen Chiu, Tainan City, TW;
De Jhong Liao, Hsinchu, TW;
Yu-Yu Chen, New Taipei City, TW;
Szu-Ying Chen, Hsinchu, TW;
Zheng-Yang Pan, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 64/017 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01);
Abstract
Embodiments of the present disclosure provide a method for selectively forming a seed layer over semiconductor fins. Some embodiments provide forming the selective seed layer using a mono-silane at an increased temperature. Some embodiments provide depositing a hetero-crystalline silicon cap layer over the bottom-up gap layer to improve gap filling and tune profiles of fin structures.