Fremont, CA, United States of America

Davis Zhang

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Beijing Tongmei Xtal Technology Co., Ltd.. Active years: 2017.

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovations of Davis Zhang

Introduction

Davis Zhang is a prominent inventor based in Fremont, California. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor single crystal substrate.

Latest Patents

Davis Zhang holds a patent for a IIIA-VA group semiconductor single crystal substrate and the method for preparing it. This substrate possesses remarkable properties, including an oxygen content ranging from 1.6×10-5 to 6×10-5 atoms/cm in a depth of 10 µm from the surface. Additionally, it exhibits an electron mobility of 4,800 cm/V·s to 5,850 cm/V·s. The preparation method involves placing a single crystal substrate in a sealed container and maintaining it at a temperature between the crystalline melting point minus 240°C and minus 30°C for a duration of 5 to 20 hours.

Career Highlights

Davis Zhang is associated with Beijing Tongmei Xtal Technology Co., Ltd., where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Davis collaborates with notable colleagues, including Morris Young and Yuanli Wang, who contribute to his innovative projects and research endeavors.

Conclusion

Davis Zhang's contributions to semiconductor technology exemplify the spirit of innovation. His patented work on semiconductor substrates showcases his expertise and commitment to advancing the field.

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