Beijing Tongmei Xtal Technology Co., Ltd.

Davis Zhang

Morris Young

Yuanli Wang

Vincent Wensen Liu

A IIIA-VA group semi-conductor single crystal substrate () has one of or both of the following two properties: an oxygen content of 1.6&#xd7;10-5.6&#xd7;10atoms/cmin a range from the surface to a depth of 10 &#x3bc;m of the wafer, and an electron mobility of 4,800 cm/V&#xb7;s-5,850 cm/V&#xb7;s. Further, a method for preparing the semi-conductor single crystal substrate () comprises: placing a single crystal substrate () to be processed in a container (); sealing said container (), and keeping said single crystal substrate () to be processed at a temperature in the range of from the crystalline melting point &#x2212;240&#xb0; C. to the crystalline melting point &#x2212;30&#xb0; C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000&#xb0; C. to 1,200&#xb0; C. for 5 hours to 20 hours.

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Fremont, CA, United States of America

Davis Zhang