The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Mar. 26, 2012
Morris Young, Fremont, CA (US);
Davis Zhang, Fremont, CA (US);
Vincent Wensen Liu, Beijing, CN;
Yuanli Wang, Beijing, CN;
Morris Young, Fremont, CA (US);
Davis Zhang, Fremont, CA (US);
Vincent Wensen Liu, Beijing, CN;
Yuanli Wang, Beijing, CN;
BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
A IIIA-VA group semi-conductor single crystal substrate () has one of or both of the following two properties: an oxygen content of 1.6×10-5.6×10atoms/cmin a range from the surface to a depth of 10 μm of the wafer, and an electron mobility of 4,800 cm/V·s-5,850 cm/V·s. Further, a method for preparing the semi-conductor single crystal substrate () comprises: placing a single crystal substrate () to be processed in a container (); sealing said container (), and keeping said single crystal substrate () to be processed at a temperature in the range of from the crystalline melting point −240° C. to the crystalline melting point −30° C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000° C. to 1,200° C. for 5 hours to 20 hours.