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For the Inventor, By the Inventor

Boise, ID, United States of America

David Q Wright

USPTO Granted Patents = 15

Average Co-Inventor Count = 1.7

ph-index = 12

Forward Citations = 721(Granted Patents)


Company Filing History:

goldMedal14 out of 37,920 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 832,718 
Other
 patents

Years Active: 1997-2010

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15 patents (USPTO):Explore Patents
1. 7687793 - Resistance variable memory cells (2010-03-30),
2. 7235419 - Method of making a memory cell (2007-06-26),
3. 7102150 - PCRAM memory cell and method of making same (2006-09-05),
4. 7071021 - PCRAM memory cell and method of making same (2006-07-04),
5. 6833046 - Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies (2004-12-21),
6. 6768213 - Automated combi deposition apparatus and method (2004-07-27),
7. 6417076 - Automated combi deposition apparatus and method (2002-07-09),
8. 6387289 - Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies (2002-05-14),
9. 6309282 - Variable abrasive polishing pad for mechanical and chemical-mechanical planarization (2001-10-30),
10. 6251785 - Apparatus and method for polishing a semiconductor wafer in an overhanging position (2001-06-26),
11. 6186870 - Variable abrasive polishing pad for mechanical and chemical-mechanical planarization (2001-02-13),
12. 6062958 - Variable abrasive polishing pad for mechanical and chemical-mechanical (2000-05-16),
13. 5945347 - Apparatus and method for polishing a semiconductor wafer in an (1999-08-31),
14. 5882248 - Apparatus for separating wafers from polishing pads used in (1999-03-16),
15. 5658190 - Apparatus for separating wafers from polishing pads used in (1997-08-19),

Title: The Innovative Journey of David Q Wright

Introduction: David Q Wright, an esteemed inventor based in Boise, ID, has made significant contributions to the field of memory technology. With a remarkable portfolio comprising 15 patents, Wright has demonstrated a commitment to research and development, particularly in resistance variable memory cells.

Latest Patents: Among his latest innovations are groundbreaking patents related to memory cell technology. One of his notable inventions is the "Resistance Variable Memory Cells," where an inverted Phase Change Random Access Memory (PCRAM) cell is created by plating a copper bottom electrode with a conductive material, such as silver. This process involves the application of chalcogenide material, which is subjected to a conversion process that allows ions from the plated material to diffuse into the chalcogenide. Another closely related patent, "Method of Making a Memory Cell," describes the same innovative technique of utilizing conductive materials to enhance memory cell functionality.

Career Highlights: David Q Wright has made a significant impact through his work with companies such as Micron Technology Incorporated. His expertise and innovative mindset have propelled advancements within the memory technology sector, inspiring future innovations.

Collaborations: Throughout his career, Wright has collaborated with notable colleagues, including Steven T. Harshfield and John K. Skrovan. Their collective efforts have contributed to the advancement of memory cell technologies and have fostered an environment of shared knowledge and innovation.

Conclusion: David Q Wright’s contributions to the field of memory technology are a testament to his dedication and ingenuity as an inventor. With numerous patents to his name and a strong background in research, Wright continues to influence the future of technology and innovation in the industry.

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