Micron Technology Incorporated

Other

David Q Wright

Steven T Harshfield

John K Skrovan

Karl M Robinson

Richard D Holscher

Ziad R Hatab

Mike Walker

An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.

Resistance variable memory cells

Method of making a memory cell

PCRAM memory cell and method of making same

Planarizing machines and methods for selectively using abrasive slurries on fixed-abrasive planarizing pads in mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies. In one embodiment of a method in accordance with the invention, a microelectronic substrate is planarized by positioning a fixed-abrasive planarizing pad on a table of a planarizing machine, covering at least a portion of a planarizing surface on the pad with a first abrasive planarizing solution during a first stage of a planarizing cycle, and then adjusting a concentration of the abrasive particles on the planarizing surface at a second stage of the planarizing cycle after the first stage. The concentration of the second abrasive particles can be adjusted during the second stage of the planarizing cycle by coating the planarizing surface with a non-abrasive second planarizing solution without abrasive particles during the second stage. The second planarizing solution can be dispensed onto the planarizing surface after terminating a flow of the first planarizing solution at the end of the first stage of the planarizing cycle, or the flow of the first planarizing solution can be continued after the first stage of the planarizing cycle. Several embodiments of these methods accordingly use only the abrasive first planarizing solution during a pre-wetting or initial phase of the first stage of the planarizing cycle, and then either only the second planarizing solution or a combination of the first and second planarizing solutions during a second stage of the planarizing cycle. Additionally, abrasive planarizing solution can be dispensed at the end of the polish cycle (activated by time or endpoint) in order to improve polish characteristics of fixed abrasives polish on planarized wafers.

Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies

A method and system for protecting global alignment marks during the fabrication of wafers are described. A semiconductor wafer-in-process includes a substrate having one or more global alignment sites, each site having an alignment mark. A photoresist material is deposited over the wafer-in-process, including over the alignment marks. A stepper or other suitable device exposes full field images over the entire wafer-in-process, thus exposing a portion of the photoresist material covering the alignment marks which is developed. A globule of protective material is deposited over the patterned photoresist over the alignment marks, thus protecting them during a subsequent etching step. The globule of protective material can also be deposited over a portion of any other adjacent structures which need protection during etching.

Automated combi deposition apparatus and method

An abrasive polishing pad for planarizing a substrate. In one embodiment, the abrasive polishing pad has a planarizing surface with a first planarizing region and a second planarizing region. The first planarizing region has a first abrasiveness and the second planarizing region has a second abrasiveness different than the first abrasiveness of the first region. The polishing pad preferably has a plurality of abrasive elements at the planarizing surface in at least one of the first or second planarizing regions. The abrasive elements may be abrasive particles fixedly suspended in a suspension medium, contact/non-contact regions on the pad, or other elements that mechanically remove material from the wafer. In operation of a preferred embodiment, the lesser abrasive of the first and second planarizing regions contacts a first area of the wafer where the relative velocity between the wafer and the polishing pad is relatively high, and the more abrasive of the first and second planarizing regions contacts a second area of the wafer where the relative velocity between the wafer and the polishing pad is relatively low. The different abrasivenesses of the first and second planarizing regions compensate for variations in relative velocities across the face of the wafer to more uniformly planarize the wafer.

Variable abrasive polishing pad for mechanical and chemical-mechanical planarization

An apparatus and method for preventing gimballing in the polishing of a semiconductor wafer held in an overhanging position with respect to a polishing pad. One embodiment includes a support apparatus for use with a device for polishing a semiconductor wafer, the device having a rotatable wafer carrier and a polishing pad attached to a rotatable platen, the wafer carrier being movable to place a semiconductor wafer held by the wafer carrier in a contacting and overhanging relationship with the polishing pad. The support apparatus includes a support to prevent gimballing of the wafer carrier when the wafer held by the wafer carrier is in the overhanging and contacting relationship with the polishing pad, the support having a low polishing surface to contact and support the semiconductor wafer. Another embodiment includes a supporting pad for use with a polishing pad, the supporting pad including a ring having an inner diameter greater than the outer diameter of the polishing pad, the ring having a supporting surface of a material with low polishing characteristics. A method for assembling polishing pads to a circular platen and a process for polishing a semiconductor wafer are also disclosed.

Apparatus and method for polishing a semiconductor wafer in an overhanging position

Variable abrasive polishing pad for mechanical and chemical-mechanical

Apparatus and method for polishing a semiconductor wafer in an

The present invention is a planarizing machine for use in chemical-mechanical planarization of semiconductor wafers that has a moveable platen, a polishing pad, a wafer carrier, and a wafer separator. The polishing pad is positioned on the platen, and it has a planarizing surface with an operational zone upon which the wafer may be planarized. The wafer carrier holds a wafer and is positionable opposite the polishing pad to engage the wafer with the operational zone of the polishing pad. The wafer separator engages either the polishing pad, the wafer, or the wafer carrier to urge a portion of the wafer away from the pad.

Growing community of inventors

Boise, ID, United States of America

David Q Wright