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For the Inventor, By the Inventor

Eugene, OR, United States of America

David Punsalan

USPTO Granted Patents = 15


Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 95(Granted Patents)


Location History:

  • Eugene, OR (US) (2004 - 2012)
  • Portland, OR (US) (2015)

Company Filing History:

goldMedal14 out of 27,404 
 
Hewlett-packard Development Company, L.p.
 patents
silverMedal1 out of 832,718 
Other
 patents

Years Active: 2004-2015

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15 patents (USPTO):Explore Patents
1. 8969865 - Semiconductor film composition (2015-03-03),
2. 8143706 - Method of forming a component having dielectric sub-layers (2012-03-27),
3. 7799624 - Method of forming a thin film component (2010-09-21),
4. 7695998 - Methods for making and using high-mobility inorganic semiconductive films (2010-04-13),
5. 7632590 - System and a method for manufacturing an electrolyte using electrodeposition (2009-12-15),
6. 7575979 - Method to form a film (2009-08-18),
7. 7504013 - System and a method for manufacturing an electrolyte using electro deposition (2009-03-17),
8. 7476460 - Thin metal oxide film and method of making the same (2009-01-13),
9. 7381633 - Method of making a patterned metal oxide film (2008-06-03),
10. 7374984 - Method of forming a thin film component (2008-05-20),
11. 7334881 - Method and system to deposit drops (2008-02-26),
12. 7265063 - Method of forming a component having dielectric sub-layers (2007-09-04),
13. 7208401 - Method for forming a thin film (2007-04-24),
14. 7071121 - Patterned ceramic films and method for producing the same (2006-07-04),
15. 6821848 - Tunnel-junction structures and methods (2004-11-23),

Title: David Punsalan: Innovator in Semiconductor Technology

Introduction

David Punsalan is a notable inventor based in Eugene, OR (US). He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has been influential in advancing the capabilities of semiconductor materials and components.

Latest Patents

Among his latest patents is a semiconductor film composition that includes an oxide semiconductor material. This innovative composition incorporates at least one polyatomic ion into the oxide semiconductor material, enhancing its properties. Another notable patent is for a method of forming a component having dielectric sub-layers. This patent describes various embodiments of methods, apparatuses, devices, and systems for creating components with these advanced dielectric sub-layers.

Career Highlights

David has worked with prominent companies, including Hewlett-Packard Development Company, L.P. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, David has collaborated with talented individuals such as Peter Mardilovich and Randy Hoffman. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

David Punsalan's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry and inspire future innovations.

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