Hewlett-Packard Development Company, L.p.

Other

David Punsalan

Peter Mardilovich

Gregory Scott Herman

Randy Hoffman

Christopher C Beatty

Laura Kramer

Dennis M Lazaroff

Curt Lee Nelson

Andrew L Van Brocklin

Peter James Fricke

Douglas A Keszler

Kurt M Ulmer

Jeremy T Anderson

Andrew Koll

Neal W Meyer

John M Koegler, Iii

Kenneth Michael Kramer

John A Thompson

James E Ellenson

Peter S Nyholm

Samson Berhane

David Blessing

John O Thompson

A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Semiconductor film composition

Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.

Method of forming a component having dielectric sub-layers

Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.

Method of forming a thin film component

Inorganic semiconductive films are made by depositing a suitable precursor substance upon a substrate, irradiating the precursor substance with electromagnetic radiation to form a nascent film, and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film.

Methods for making and using high-mobility inorganic semiconductive films

A method for manufacturing an electrolyte includes coupling a substrate to a charged electrode and electrodepositing a polymeric electrolyte on the substrate.

System and a method for manufacturing an electrolyte using electrodeposition

A method includes forming a fluid including an inorganic semiconductor material, depositing a layer of said fluid on a substrate to form a film, and curing said film to form a porous semiconductor film.

Method to form a film

A method of forming an electrolyte includes removably coupling a perimeter support to a temporary substrate, and electrodepositing an electrolyte composite film on the temporary substrate.

System and a method for manufacturing an electrolyte using electro deposition

A thin metal oxide film includes a solution of one or more metal salts and one or more water soluble polymers. A mechanism is provided for converting the metal salt(s) and water soluble polymer(s) solution into the thin metal oxide film.

Thin metal oxide film and method of making the same

A method of making a patterned metal oxide film includes jetting a sol-gel solution on a substrate. The sol-gel solution is dried to form a gel layer on the substrate. Portions of the gel layer are irradiated to pattern the gel layer and to form exposed portions. Irradiation causes the exposed portions of the gel layer to become at least one of substantially condensed to an oxide, substantially densified, substantially cured, and combinations thereof. The unexposed portions of the gel layer are removed, thereby forming the patterned metal oxide film.

Method of making a patterned metal oxide film

A system to deposit drops on a substrate includes a dispenser to dispense the drops, a shutter disposed between the dispenser and the substrate to focus the drops, and a screen, disposed between the dispenser and the shutter, configured to provide a charge to the drops.

Method and system to deposit drops

Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described.

Method for forming a thin film

A ceramic film is useful as ion-conducting ceramics, electrodes, hard ceramic coatings, transparent conducting oxides, transparent semiconducting oxides, ferroelectric oxides, and dielectric oxides. The ceramic film may be produced from a liquid precursor solution.

Patterned ceramic films and method for producing the same

Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.

Growing community of inventors

Eugene, OR, United States of America

David Punsalan