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For the Inventor, By the Inventor

Pittsford, NY, United States of America

David M Leet

This inventor holds 3 USPTO granted patents. Top assignee: Cvc Products, Inc.. Active years: 2002-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David M Leet. Retrieved from https://idiyas.com/inventor/david-m-leet

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3

% Patents Active = 33.3

Average Co-Inventor Count = 9.0

ph-index = 3

Forward Citations = 155(Granted Patents)


Company Filing History:

goldMedal3 out of 46 
 
Cvc Products, Inc.
 patents

Years Active: 2002-2003

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3 patents (USPTO):Explore Patents
1. 6645847 - Microelectronic interconnect material with adhesion promotion layer and fabrication method (2003-11-11),
2. 6627995 - Microelectronic interconnect material with adhesion promotion layer and fabrication method (2003-09-30),
3. 6365502 - Microelectronic interconnect material with adhesion promotion layer and fabrication method (2002-04-02),

Title: The Inventor David M Leet: Pioneering Innovations in Pittsford

Introduction: David M Leet is a distinguished inventor based in Pittsford, NY, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: David M Leet holds several patents in diverse areas, showcasing his versatility and creativity in inventing new solutions to complex problems.

Career Highlights: Throughout his illustrious career, David M Leet has consistently pushed the boundaries of innovation, earning recognition for his impactful inventions that have transformed industries.

Collaborations: David M Leet has collaborated with leading experts, researchers, and companies to bring his inventions to life, fostering a culture of innovation and excellence in the process.

Conclusion: David M Leet's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors, leaving a lasting legacy in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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